We can provide you with a custom solution of hardware and software accessories to make EBIC measurements possible on your SEM. 


With femtoampere sensitivity, we make it easier to probe current signals that are not accessible with other imaging systems.  We do this by providing complete solutions from the most sensitive preamplifier, sample interfacing and shielding, and a purpose designed scan controller with highest resolution possible.  All this adds up to measuring very small signals with unprecedented accuracy and very low noise.

 

 

 

 

We make imaging solid-state devices with EBIC simple.

 

Above is the cross section of a silicon solar cell. The secondary electron and EBIC signals are measured simultaneously. In the EBIC signal, the depletion region of the PN junction is visible. Line profile averaging and user define fitting functions enable the immediate extraction of minority carrier diffusion lengths.

 

Conductive epoxy wire-bonding is versatile and allows for a number of samples to for in-situ experiments that are temperature dependent and can be mounted for cross-sectional imaging.

 

In-situ conditioning of Ge Nanowire enables direct observation of the evolution of band bending at the GeOx interface.

EBIC response of 100nm diameter germanium nanowire. Bandbending from surface traps at the GeOx interface depletes the nanowire leading to parallel conduction channels for electrons and holes. The above animation was the result of 11 scans after the Ge nanowire was subjected a series of voltage sweeps of increasing magnitude and imaged with out external fields applied.

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